1 吉林建筑大学 电气与计算机学院, 吉林 长春 130118
2 南开大学 光电子薄膜器件与技术研究所, 天津 300071
采用共蒸发法在不同衬底温度下沉积Cu2ZnSnSe4（简称CZTSe)薄膜, 分析了衬底温度对CZTSe材料性质及电池性能的影响。研究表明: 当衬底温度较低时（380 ℃), CZTSe薄膜中含有SnSex使电池失效; 随着衬底温度的升高, CZTSe薄膜的结晶质量明显提升, 电池开路电压增加。但当衬底温度达到460 ℃时, 电池的转换效率反而下降; 结合CZTSe的生长机理及器件模型分析了电池效率下降可能的原因。最终在衬底温度420 ℃的条件下制备出效率为3.12%（有效面积0.34 cm2)的CZTSe太阳电池。
太阳电池 铜锌锡硒 共蒸发 温度 solar cells CZTSe co-evaporation temperature
Author Affiliations
Abstract
1 School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
2 Institute of Photo Electronics Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
3 School of Physics, Nankai University, Tianjin 300071, China
Cu2ZnSnSe4 (CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth. Na was dif-fused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries. The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor. The efficiency of 2.85% was achieved at substrate temperature as low as 420 ℃.
光电子快报（英文版）
2019, 15(2): 132
1 长春理工大学 理学院, 长春 130022
2 空军航空大学, 长春 130022
采用X射线衍射(XRD)和透射电子显微镜(TEM)手段对微乳液法合成的Zn0.9Co0.1O纳米棒进行了表征。通过室温下的共振拉曼光谱和光致发光光谱手段, 研究了所合成纳米材料的共振拉曼光谱和发光特性, 并与体相ZnO的研究结果对比, 发现合成的材料具有四阶声子紫外共振拉曼散射, 而体相材料只有两阶, 并观察到在紫外和可见区域所合成材料发光的变化规律也和体相材料存在差异, 讨论了产生差异的原因。
共振拉曼光谱 光致发光光谱 ZnO ZnO resonance Raman spectrum photoluminescence
